DocumentCode
937852
Title
Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering
Author
McKee, Adam ; Marsh, John H. ; De La Rue, Richard M.
Volume
29
Issue
18
fYear
1993
Firstpage
1657
Lastpage
1659
Abstract
The retention of high electrical and optical quality in GaInAs/GaInAsP multiquantum well laser material which has been bandgap widened by photoabsorption induced disordering (PAID) has been investigated using photoconducting measurements. On applying a reverse bias, Franz-Keldysh broadening of the exciton features is observed demonstrating that bandgap shifted modulators can be fabricated. Selective area disordering across the wafer using an Au reflection mask is also demonstrated.
Keywords
III-V semiconductors; chemical interdiffusion; electro-optical devices; energy gap; excitons; gallium arsenide; indium compounds; integrated optics; optical modulation; photoconductivity; semiconductor lasers; semiconductor quantum wells; Au; Au reflection mask; Franz-Keldysh broadening; GaInAs-GaInAsP; GaInAs/GaInAsP MQW structures; bandgap; bandgap shifted modulators; electrical quality; exciton; optical quality; photoabsorption induced disordering; photoconducting measurements; photonic integrated circuit; reverse bias;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931103
Filename
233103
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