DocumentCode :
937873
Title :
Electrical traps in GaAs microwave f.e.t.s
Author :
Adlerstein, M.G.
Author_Institution :
Raytheon Research Division, Waltham, USA
Volume :
12
Issue :
12
fYear :
1976
Firstpage :
297
Lastpage :
298
Abstract :
Described is a rapid, sensitive technique for determining the activation energies for electron traps present in the channel of GaAs microwave field-effect transistors. The measurements can be made directly on the f.e.t.s. Taken together with systematic variation of growth procedures, the method can be applied toward identification and elimination of the traps.
Keywords :
III-V semiconductors; electron traps; field effect transistors; solid-state microwave devices; GaAs microwave FET; activation energies; electron traps;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760229
Filename :
4239805
Link To Document :
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