DocumentCode
937913
Title
New latch-up-free IGBT with low on-resistance
Author
Board, K.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. Coll. Swansea, UK
Volume
29
Issue
18
fYear
1993
Firstpage
1664
Lastpage
1666
Abstract
A new form of IGBT is presented which does not latch up in the on-state however hard it is driven. It also has a very low on-resistance due to the small cell width achievable and the full conductivity modulation of the channel region.
Keywords
insulated gate bipolar transistors; power transistors; IGBT; cell width; channel region; conductivity modulation; insulated gate bipolar transistor; latch-up-free; low on-resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931108
Filename
233108
Link To Document