Title :
Room temperature operation of submicrometre radius disk laser
Author :
Levi, A.F.J. ; McCall, S.L. ; Pearton, S.J. ; Logan, R.A.
Author_Institution :
Dept. of Electr. Eng. & Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
An InGaAs/InGaAsP quantum well disk laser 0.8 mu m in radius and 0.18 mu m thick is operated at room temperature in the M=5 whispering mode at wavelength lambda =1.542 mu m using lambda =0.85 mu m optical pumping. Because approximately 20% of the spontaneous emission feeds into lasing modes, the output is superlinear with pump over a wide range. A narrow luminescent peak at 1.690 mu m wavelength is identified with the M=4 whispering mode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser transitions; luminescence of inorganic solids; optical pumping; photoluminescence; semiconductor lasers; 0.18 micron; 0.8 micron; 0.85 micron; 1.542 micron; 1.69 micron; 293 K; InGaAs-InGaAsP; InGaAs/InGaAsP quantum well disk laser; M=4 whispering mode; M=5 whispering mode; lasing modes; luminescent peak; room temperature operation; spontaneous emission; submicrometre radius disk laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931109
