DocumentCode :
938000
Title :
Regenerative Frequency Division with a GaAs FET
Author :
Rauscher, Christen
Volume :
32
Issue :
11
fYear :
1984
fDate :
11/1/1984 12:00:00 AM
Firstpage :
1461
Lastpage :
1468
Abstract :
The circuit concept to be described accomplishes regenerative frequency division by employing a GaAs FET which is biased near pinchoff. The concept aims at efficient utilization of basic device characteristics, providing well-behaved divider performance and easy circuit designability. This is exemplified with the help of an experimental 16-to-8-GHz divider circuit whose output response is studied for single-tone CW, RF-pulsed, and two-tone CW excitations.
Keywords :
Bandwidth; Counting circuits; Electronic warfare; FETs; Frequency conversion; Gallium arsenide; Microwave devices; Microwave frequencies; Phase locked loops; Varactors;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1984.1132872
Filename :
1132872
Link To Document :
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