DocumentCode :
938052
Title :
Crystallisation phenomena of native anodic oxides for GaAs devices
Author :
Weiss, B.L. ; Hartnagel, H.L.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Volume :
12
Issue :
13
fYear :
1976
Firstpage :
321
Lastpage :
322
Abstract :
Results are presented which show the crystallisation processes and changes in the composition of native anodic oxides produced by annealing in a nitrogen atmosphere.
Keywords :
III-V semiconductors; annealing; gallium arsenide; semiconductor device manufacture; GaAs devices; annealing; crystallisation processes; native anodic oxides;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760246
Filename :
4239825
Link To Document :
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