Title :
Analysis of multicomponent thin films on GaAs by anodic processes
Author :
El-Safti, A.F.A.B. ; Weiss, B.L. ; Hartnagel, H.L.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Abstract :
Results arc presented which show that Ge ions diffuse to the surface rather than the OH¿ ions diffusing into the sample during the anodisation of Ge and Al on GaAs. Anodisatiort has also been used to show the growth of GaAs during the alloying of t.f.e. ohmic contacts to GaAs.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor device manufacture; thin films; GaAs; Ge ions; OH- ions; anodic processes; anodisation; multicomponent thin films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760247
