DocumentCode
938113
Title
Design criteria for the ´hi´ doping density in hi-lo high-efficiency impatts
Author
Blakey, P.A.
Author_Institution
University College London, Department of Electronic & Electrical Engineering, London, UK
Volume
12
Issue
13
fYear
1976
Firstpage
329
Lastpage
330
Abstract
The influence of the ´hi´ doping level on the performance of hi-lo high-efficiency structures is considered. Computed results show the variations of various quantities as functions of ´hi´-region doping density. These results enable estimates to be made of the maximum permissible ´hi´ doping level for a range of frequencies, current densities and applications.
Keywords
IMPATT diodes; semiconductor doping; solid-state microwave devices; hi doping level; hi lo high efficiency IMPATTS;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760252
Filename
4239831
Link To Document