DocumentCode :
938206
Title :
Analysis and Design of a Single-Resonator GaAs FET Oscillator with Noise Degeneration
Author :
Galani, Zvi ; Bianchini, Michael J. ; Waterman, Raymond C., Jr. ; Dibiase, Robert ; Laton, Richard W. ; Cole, J. Bradford
Volume :
32
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1556
Lastpage :
1565
Abstract :
This paper presents an analysis of a low-noise dielectric resonator GaAs FET oscillator in a frequency-locked loop (FLL), which is used for FM noise degeneration. In this circuit, one resonator serves both as the frequency-determining element of the oscillator and as the dispersive element of the discriminator. The results of the analysis are used to generate design guidelines. These guidelines were followed in an experimental realization of an X-band circuit. The measured FM noise was--120 and--142 dBc/Hz at 10- and 100-kHz offset frequencies, respectively, and corresponded closely to predicted results.
Keywords :
Circuit noise; Dielectrics; Dispersion; FETs; Frequency locked loops; Frequency measurement; Gallium arsenide; Guidelines; Noise measurement; Oscillators;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1984.1132894
Filename :
1132894
Link To Document :
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