Title :
Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 μm
Author :
Pougeoise, E. ; Gilet, Ph ; Grosse, Ph ; Poncet, S. ; Chelnokov, A. ; Gerard, J.M. ; Bourgeois, G. ; Stevens, R. ; Hamelin, R. ; Hammar, M. ; Berggren, J. ; Sundgren, P.
Author_Institution :
LETI, CEA-Grenoble, Grenoble, France
fDate :
5/11/2006 12:00:00 AM
Abstract :
Results on strained InGaAs quantum well vertical cavity surface emitting lasers for optical interconnection applications are reported. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; optical interconnections; optical transmitters; quantum well lasers; surface emitting lasers; 1.3 micron; InGaAs; distribute Bragg reflector oxide-confined devices; fundamental mode continuous-wave lasing; optical interconnection; room temperature; strained InGaAs quantum well vertical-cavity surface-emitting lasers; vapour-phase epitaxy grown structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060060
