DocumentCode :
938338
Title :
GaAs/GaSb-AlAs/AlSb optical Bragg reflectors
Author :
Kost, A.R. ; Hasenberg, T.C.
Author_Institution :
Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA
Volume :
42
Issue :
10
fYear :
2006
fDate :
5/11/2006 12:00:00 AM
Firstpage :
597
Lastpage :
598
Abstract :
Semiconductor Bragg mirrors on InP substrates that use GaAs/GaSb and AlAs/AlSb superlattices for the optically reflecting layers are described. The use of superlattices circumvents difficulties with growth of the GaAsSb and AlAsSb alloys, and they are transparent for wavelengths as short as 1050 nm. The mirrors can be combined with conventional InGaAsP active layers that can also be grown on InP.
Keywords :
distributed Bragg reflector lasers; mirrors; semiconductor lasers; semiconductor superlattices; 1050 nm; AlAsSb; Bragg mirrors; GaAs-GaSb-AlAs-AlSb; GaAs/GaSb-AlAs/AlSb optical Bragg reflectors; GaAsSb; InGaAsP active layers; InP substrates; optically reflecting layers; semiconductor Bragg mirrors; semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20060141
Filename :
1633579
Link To Document :
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