Title :
GaAs/GaSb-AlAs/AlSb optical Bragg reflectors
Author :
Kost, A.R. ; Hasenberg, T.C.
Author_Institution :
Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA
fDate :
5/11/2006 12:00:00 AM
Abstract :
Semiconductor Bragg mirrors on InP substrates that use GaAs/GaSb and AlAs/AlSb superlattices for the optically reflecting layers are described. The use of superlattices circumvents difficulties with growth of the GaAsSb and AlAsSb alloys, and they are transparent for wavelengths as short as 1050 nm. The mirrors can be combined with conventional InGaAsP active layers that can also be grown on InP.
Keywords :
distributed Bragg reflector lasers; mirrors; semiconductor lasers; semiconductor superlattices; 1050 nm; AlAsSb; Bragg mirrors; GaAs-GaSb-AlAs-AlSb; GaAs/GaSb-AlAs/AlSb optical Bragg reflectors; GaAsSb; InGaAsP active layers; InP substrates; optically reflecting layers; semiconductor Bragg mirrors; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060141
