DocumentCode
938338
Title
GaAs/GaSb-AlAs/AlSb optical Bragg reflectors
Author
Kost, A.R. ; Hasenberg, T.C.
Author_Institution
Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA
Volume
42
Issue
10
fYear
2006
fDate
5/11/2006 12:00:00 AM
Firstpage
597
Lastpage
598
Abstract
Semiconductor Bragg mirrors on InP substrates that use GaAs/GaSb and AlAs/AlSb superlattices for the optically reflecting layers are described. The use of superlattices circumvents difficulties with growth of the GaAsSb and AlAsSb alloys, and they are transparent for wavelengths as short as 1050 nm. The mirrors can be combined with conventional InGaAsP active layers that can also be grown on InP.
Keywords
distributed Bragg reflector lasers; mirrors; semiconductor lasers; semiconductor superlattices; 1050 nm; AlAsSb; Bragg mirrors; GaAs-GaSb-AlAs-AlSb; GaAs/GaSb-AlAs/AlSb optical Bragg reflectors; GaAsSb; InGaAsP active layers; InP substrates; optically reflecting layers; semiconductor Bragg mirrors; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20060141
Filename
1633579
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