Title :
K-band low-noise amplifiers using 0.18 μm CMOS technology
Author :
Kyung-Wan Yu ; Yin-Lung Lu ; Da-Chiang Chang ; Liang, V. ; Chang, M.F.
Author_Institution :
Dept. of Electr. Eng., UCLA, Los Angeles, CA, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18 μm CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB noise figure (NF) at 23.5 GHz. The 26 GHz LNA achieves an 8.9 dB gain at the peak gain frequency of 25.7 GHz and a 6.93 dB NF at 25 GHz. The input referred third-order intercept point (IIP3) is >+2 dBm for both LNAs with a current consumption of 30 mA from a 1.8 V power supply. To our knowledge, the LNAs show the highest operation frequencies ever reported for LNAs in a standard CMOS process.
Keywords :
CMOS integrated circuits; amplifiers; integrated circuit design; integrated circuit noise; microwave integrated circuits; 0.18 micron; 1.8 V; 12.86 dB; 23.5 GHz; 24 GHz; 25 GHz; 25.7 GHz; 26 GHz; 30 mA; 5.6 dB; 6.93 dB; 8.9 dB; CMOS technology; K-band low-noise amplifiers; current consumption; noise figure; peak gain frequency; power supply; third-order intercept point; CMOS process; CMOS technology; Circuits; Frequency; Gain; Inductors; K-band; Low-noise amplifiers; Noise measurement; Parasitic capacitance;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2004.825175
