Title :
Metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates for intersubband devices operating toward short-wavelength region
Author :
Gozu, S. ; Ueta, A. ; Yamamoto, N. ; Akahane, K. ; Ohtani, N. ; Tsuchiya, M.
Author_Institution :
Basic & Adv. Res. Dept., Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
fDate :
5/11/2006 12:00:00 AM
Abstract :
Metamorphic InGaAs/AlAsSb multiple quantum wells (M-MQWs) were grown on GaAs substrate, and a polarity dependent optical absorption of the M-MQWs was evaluated. Intersubband absorptions were clearly observed in the M-MQWs. Therefore, M-MQWs can be applied to the intersubband devices operating toward short-wavelength region.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical modulation; photoluminescence; quantum well devices; GaAs; GaAs substrates; InGaAs-AlAsSb; InGaAs/AlAsSb multiple quantum wells; Metamorphic InGaAs/AlAsSb quantum wells; all-optical modulator; intersubband absorptions; intersubband devices; polarity dependent optical absorption; short-wavelength region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060077
