Title :
Integration of GaAs m.e.s.f.e.t.s and Gunn elements in a 4 bit-gate device
Author :
Hashizume, Nobuya ; Kataoka, S.
Author_Institution :
Electrotechnical Laboratory, Tokyo, Japan
Abstract :
A GaAs m.e.s.f.e.t. and a Schottky electrode-triggered Gunn element have been integrated into a single device which operated as a negative logic inhibitor. A monolithic device of four such inhibitors, connected in cascade, was operated in a stable manner, with a signal delay per gate as small as 40 ps.
Keywords :
Gunn devices; field effect transistors; logic gates; GaAs MESFET; Gunn elements; Schottky electrode triggered Gunn element; monolithic device; negative logic inhibitor; signal delay per gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760284
