GaInNAs metal-semiconductor-metal near-infrared photodetectors

Author

Su, Y.K. ; Hsu, S.H. ; Chuang, R.W. ; Chang, S.J. ; Chen, W.C.

Author_Institution

Inst. of Microelectron. & Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

153

Issue

3

fYear

2006

fDate

6/12/2006 12:00:00 AM

Firstpage

128

Lastpage

130

Abstract

Fabrication of metal-semiconductor-metal near-infrared photodetectors with 0.4 μm-thick GaInNAs absorption layer was demonstrated. Better crystal quality and fewer dislocations were obtained from samples with lower nitrogen content based on the results of photoluminescence and high-resolution X-ray diffraction. The absorption edge located at 1.2 μm under 4 V bias was realised owing to the nitrogen incorporation effect, and the responsivity of GaInNAs MSM photodetectors higher than 60 mA/w was also successfully achieved when compared to other conventional InGaAs detectors. The devices, hereby demonstrated believably, should have potential applications in fibre optics communications.

Keywords

III-V semiconductors; X-ray diffraction; dislocations; gallium arsenide; gallium compounds; infrared detectors; metal-semiconductor-metal structures; optical fabrication; photodetectors; photoluminescence; semiconductor doping; wide band gap semiconductors; 0.4 mum; 1.2 mum; 4 V; GaInNAs; GaInNAs absorption layer; X-ray diffraction; absorption edge; dislocations; metal-semiconductor-metal near-infrared photodetectors; nitrogen incorporation effect; photoluminescence;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20050076

Filename

1633589