Title :
Computation of the gain-bandwidth performance of an X-band active reactance compensated IMPATT amplifier
Author :
Aitchison, C.S. ; Bains, A.S.
Author_Institution :
Chelsea College, Electronics Department, London, UK
Abstract :
Results obtained from a computed gain¿frequency response of an IMPATT amplifier, operating at 9.0 GHz with active reactance compensation, are reported. Measured values of the impedance of an impatt device, at an r.f. level of + 10 dBm and a direct current of 60 mA, are used. At 16 dB gain, the ¿1 dB bandwidth improves from 240 to 1450 MHz and from 110 to 560 MHz for the unencapsulated and encapsulated diode amplifiers, respectively.
Keywords :
IMPATT diodes; active networks; microwave amplifiers; solid-state microwave circuits; 9.0 GHz; X-band active reactance compensated IMPATT amplifier; gain bandwidth performance; impedance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760291
