Title :
In situ in etching technique for l.p.e. InP
Author :
Wrick, V. ; Scilla, G.J. ; Eastman, L.F. ; Henry, R.L. ; Swiggard, E.M.
Author_Institution :
Cornell University, Ithaca, USA
Abstract :
An in situ In etch technique is described for l.p.e. growth of InP. This method eliminates substrate `sensitivity¿ to orientation difficulties and removes any need for melt supersaturation to obtain good morphology. In addition, in situ etching removes any substrate pitting or type conversion which degrades actual device performance.
Keywords :
III-V semiconductors; epitaxial growth; etching; indium compounds; semiconductor growth; In etch technique; InP epitaxy; in situ etching; liquid phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760302
