• DocumentCode
    938614
  • Title

    High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor

  • Author

    Beneking, H. ; Mischel, H. ; Schul, G.

  • Author_Institution
    RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
  • Volume
    12
  • Issue
    16
  • fYear
    1976
  • Firstpage
    395
  • Lastpage
    396
  • Abstract
    A Ga1-xAlxAs-GaAs heterostructure phototransistor has been manufactured and tested. The device is an n-p-n structure employing the `wide-gap-emitter¿ effect. High internal current gain (>2000) has been achieved.
  • Keywords
    III-V semiconductors; bipolar transistors; p-n heterojunctions; phototransistors; >2000 gain; Ga1-xAlxAs-GaAs phototransistor; heterojunction transistors; heterostructure phototransistor; high gain transistors; high internal current gain; npn structure; wide gap emitter transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760303
  • Filename
    4239897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=938614