DocumentCode :
938770
Title :
New Analysis of Semiconductor Isolators: The Modified Spectral Domain Analysis (Short Papers)
Author :
Tedjini, S. ; Pic, E.
Volume :
33
Issue :
1
fYear :
1985
fDate :
1/1/1985 12:00:00 AM
Firstpage :
59
Lastpage :
64
Abstract :
This paper addresses semiconductor isolators of the field displacement effect type. The semiconductor is modelized by its surface impedance tensor. This description allows an extension of the well-known spectral domain method to the analysis of the semiconductor isolators. Different configurations are studied and numerical results are given. The finline isolator with InSb is shown to be the best choice-indeed, insertion loss is less than 3 dB/cm and isolation is greater than 18 dB/cm. Experimental results supporting these calculations will be published in a following paper.
Keywords :
Circuits; Coaxial components; Electromagnetic waveguides; Insertion loss; Isolators; Magnetic semiconductors; Magnetostatic waves; Semiconductor waveguides; Slabs; Spectral analysis;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1985.1132947
Filename :
1132947
Link To Document :
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