Title :
A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology
Author :
Hedayati, Raheleh ; Lanni, Luigia ; Rodriguez, Saul ; Malm, B. Gunnar ; Rusu, Ana ; Zetterling, Carl-Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden
Abstract :
A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25°C to 500°C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3 dB bandwidth increases from 270 kHz at 25°C to 410 kHz at 500°C. The opamp achieves 1.46 V/μs slew rate and 0.25% total harmonic distortion. This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits.
Keywords :
bipolar integrated circuits; closed loop systems; feedback; integrated circuit design; operational amplifiers; silicon compounds; wide band gap semiconductors; SiC; closed loop gain; frequency 270 kHz; frequency 410 kHz; high temperature analog integrated circuits; inverting negative feedback amplifier configuration; monolithic bipolar operational amplifier; temperature 25 degC to 500 degC; wide temperature operation; Gain; JFETs; Plasma temperature; Silicon carbide; Temperature distribution; Temperature measurement; Bipolar integrated circuits (ICs); high temperature ICs; negative feedback; operational amplifiers; operational amplifiers.;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2322335
