• DocumentCode
    938906
  • Title

    High-speed optoelectronic switching in silicon gap-shunt microstrip structures

  • Author

    Platte, W.

  • Author_Institution
    Universitÿt Erlangen-Nÿrnberg, Institut fÿr Hochfrequenztechnik, Erlangen, West Germany
  • Volume
    12
  • Issue
    17
  • fYear
    1976
  • Firstpage
    437
  • Lastpage
    438
  • Abstract
    A new silicon microstrip device for high-speed optoelectronic switching and gating of d.c. or r.f. signals up to the gigahertz range, using a combined gap-shunt microstrip structure, is reported. The switching actions are achieved via laser-excited highly conductive solid-state plasmas
  • Keywords
    optoelectronic devices; semiconductor switches; strip line components; DC signals; RF signals; Si gap shunt microstrip structures; high speed optoelectronic switching; laser excited solid state plasmas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760332
  • Filename
    4239933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=938906