Title :
High-speed optoelectronic switching in silicon gap-shunt microstrip structures
Author_Institution :
Universitÿt Erlangen-Nÿrnberg, Institut fÿr Hochfrequenztechnik, Erlangen, West Germany
Abstract :
A new silicon microstrip device for high-speed optoelectronic switching and gating of d.c. or r.f. signals up to the gigahertz range, using a combined gap-shunt microstrip structure, is reported. The switching actions are achieved via laser-excited highly conductive solid-state plasmas
Keywords :
optoelectronic devices; semiconductor switches; strip line components; DC signals; RF signals; Si gap shunt microstrip structures; high speed optoelectronic switching; laser excited solid state plasmas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760332
