Title :
Field Analysis of a Millimeter-Wave GaAs Double-Drift IMPATT Diode in the Traveling-Wave Mode
Author :
Fukuoka, Yoshiro ; Itoh, Tatsuo
fDate :
3/1/1985 12:00:00 AM
Abstract :
An analysis of a realistic model of distributed lMPATT structures is described. Wave equations are solved with all losses included. The results show that net gain is produced at frequencies just above the avalanche resonance, while the propagation becomes slow at high frequencies. The results compare favorably with experiment.
Keywords :
Conductivity; Differential equations; Electromagnetic scattering; Frequency; Gallium arsenide; Magnetic fields; P-n junctions; Partial differential equations; Semiconductor diodes; Semiconductor materials;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1985.1132983
