DocumentCode
939129
Title
Field Analysis of a Millimeter-Wave GaAs Double-Drift IMPATT Diode in the Traveling-Wave Mode
Author
Fukuoka, Yoshiro ; Itoh, Tatsuo
Volume
33
Issue
3
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
216
Lastpage
222
Abstract
An analysis of a realistic model of distributed lMPATT structures is described. Wave equations are solved with all losses included. The results show that net gain is produced at frequencies just above the avalanche resonance, while the propagation becomes slow at high frequencies. The results compare favorably with experiment.
Keywords
Conductivity; Differential equations; Electromagnetic scattering; Frequency; Gallium arsenide; Magnetic fields; P-n junctions; Partial differential equations; Semiconductor diodes; Semiconductor materials;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1985.1132983
Filename
1132983
Link To Document