Title :
Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation
Author :
Sawada, Tsuyoshi ; Hasegawa, Hiroshi
Author_Institution :
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Abstract :
The capacitance/voltage characteristics of the metal-oxide-semiconductor system formed on n-type GaAs by anodic oxidation differ greatly from those of p-type GaAs, showing an marked anomalous frequency dispersion which is not caused by the Quast carrier diffusion mechanism, but by an anomalous formation of interface states.
Keywords :
III-V semiconductors; capacitance; gallium arsenide; metal-insulator-semiconductor structures; surface electron states; MOS capacitor; anodic oxidation; anomalous frequency dispersion; capacitance voltage characteristics; interface states; n-GaAs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760358
