Title :
Hydrogen sensitivity of palladium--thin-oxide--silicon Schottky barriers
Author :
Shivaraman, M.S. ; Lundstr¿¿m, I. ; Svensson, Christer ; Hammarsten, H.
Author_Institution :
Chalmers University of Technology, Research Laboratory of Electronics, Gothenburg, Sweden
Abstract :
It is shown that current transport through Schottky barriers formed by Pd on n-type silicon with a thin thermally grown oxide is sensitive to hydrogen in the ambient. It is shown that a transition from minority- to majority-carrier dominated current occurs with increasing hydrogen pressure.
Keywords :
Schottky effect; metal-insulator-semiconductor structures; tunnelling; H2 sensitivity; Pd thin oxide Si Schottky barriers; majority carriers; minority carriers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760365
