• DocumentCode
    939293
  • Title

    7.9--8.4 GHz GaAs m.e.s.f.e.t. amplifier

  • Author

    Goel, J. ; Camisa, R.

  • Author_Institution
    RCA Laboratories, David Sarnoff Research Center, Princeton, USA
  • Volume
    12
  • Issue
    19
  • fYear
    1976
  • Firstpage
    493
  • Lastpage
    494
  • Abstract
    A 4-stage balanced GaAs m.e.s.f.e.t. amplifier has been developed for the 7.9--8.4 GHz satellite-communication frequency band. Linear gain of 26±0.5dB and 150 mW power at 1 dB compression were obtained across the design band. The small-signal gain, phase linearity, group delay and noise figure are described as a function of frequency. Large-signal gain saturation, 3rd-order intermodulation distortion, gain and phase against temperature and a.m.-to-p.m. conversion data are also presented.
  • Keywords
    field effect transistors; microwave amplifiers; solid-state microwave circuits; 7.9 to 8.4 GHz; GaAs MESFET amplifier; group delay; intermodulation distortion; linear gain; noise figure; phase linearity; small signal gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760374
  • Filename
    4240053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=939293