DocumentCode
939297
Title
A New Nonvolatile Bistable Polymer-Nanoparticle Memory Device
Author
Lin, Heng-Tien ; Pei, Zingway ; Chen, Jun-Rong ; Hwang, Gue-Wuu ; Fan, Jui-Fen ; Chan, Yi-Jen
Author_Institution
Ind. Technol. Res. Inst. (ITRI), Hsinchu
Volume
28
Issue
11
fYear
2007
Firstpage
951
Lastpage
953
Abstract
In this letter, we demonstrate a new organic bistable nonvolatile memory device that is adopting polymer-chain-stabilized gold (Au) nanoparticles in a host polymer as a memory active layer. In this letter, the Au nanoparticles are well dispersed in the host polymer so as to enhance stability of memory devices. Current-voltage characteristics show that the device switches from an initial low-conductivity state to a high-conductivity state upon applying an external electric field at room temperature. This memory can be switched ON and OFF for over 150 times without an apparent performance degradation. In addition, the memory state can retain for over 36 000 s in air. This memory device is thus considered to be a suitable candidate for flexible electronics applications.
Keywords
flexible electronics; gold; nanoparticles; random-access storage; Au - Element; current voltage characteristics; external electric field; flexible electronics; gold nanoparticles; nonvolatile bistable memory device; polymer chain stabilized; polymer-nanoparticle memory device; temperature 293 K to 298 K; Bistable; endurance; nonvolatile; retention time;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.903944
Filename
4357974
Link To Document