DocumentCode :
939565
Title :
A Variable Conversion Gain Star Mixer for Ka-Band Applications
Author :
Lin, Che-Hung ; Chiu, Jui-Chieh ; Lin, Chih-Ming ; Lai, Yu-Ann ; Wang, Yeong-Her
Author_Institution :
Nat. Cheng-Kung Univ., Tainan
Volume :
17
Issue :
11
fYear :
2007
Firstpage :
802
Lastpage :
804
Abstract :
A variable conversion gain star mixer for Ka-band applications has been presented. This monolithic microwave integrated circuit was implemented on AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor process with a chip size of 1.7times1.7 mm2. The mixer is modified from conventional star mixer to apply dc bias. The conversion gain of the mixer, controlled by the voltage of the diodes, could be applied to meet gain compensation requirements in communication systems. From the measured results, the circuit can provide 11.9 dB conversion gain and 9.3 dB gain adjustment by controlling voltage from 0 to 0.7 V at 30 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; aluminium compounds; gallium arsenide; indium compounds; AlGaAs-InGaAs-GaAs - Interface; Ka-band applications; PHEMT; communication systems; frequency 30 GHz; gain compensation requirements; monolithic microwave integrated circuit; pseudomorphic high-electron-mobility transistor; variable conversion gain star mixer; voltage 0 V to 0.7 V; voltage control; Gain compensation; Ka-band; PHEMT; monolithic microwave integrated circuit (MMIC); star mixer;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2007.908059
Filename :
4358001
Link To Document :
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