• DocumentCode
    939769
  • Title

    Interdiffusion of metallic contact layers on silicon IMPATT diodes

  • Author

    Morgan, D.V. ; Howes, M.J. ; Taylor, Daniel J. ; Brook, P.

  • Author_Institution
    University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
  • Volume
    12
  • Issue
    21
  • fYear
    1976
  • Firstpage
    547
  • Lastpage
    548
  • Abstract
    A comparative study, using Rutherford backscattering of He ions, of Ag/Pt/Cr and Au/Pt/Cr metallisations on silicon substrates has shown that significant interdiffusion takes place for Ag/Pt/Cr at temperatures around 350°C, resulting in the removal of the platinum barrier layer. No such effect takes place at the same temperature for Au/Pt/Cr. These results are consistent with the observed life-test performance of devices with these metallisations.
  • Keywords
    IMPATT diodes; diffusion in solids; metallisation; particle backscattering; Ag/Pt/Cr; Au/Pt/Cr; He ions; Rutherford backscattering; Si IMPATT diodes; interdiffusion; metallic contact layers; metallisations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760417
  • Filename
    4240133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=939769