DocumentCode
939943
Title
Electrical and Thermal Cosimulation of GaAs Interconnects
Author
Wartenberg, Scott A. ; Zhao, Gang ; Liu, Qing Hou
Author_Institution
Booz Allen Hamilton Inc., Arlington
Volume
30
Issue
4
fYear
2007
Firstpage
758
Lastpage
762
Abstract
It is well known that the poor thermal conductivity of GaAs adversely affects the electrical performance of GaAs circuits. Although they interact, the electrical and thermal circuits are simulated using separate software simulation packages. If the circuits are cosimulated on the same package, then the electrical and thermal circuits can interactively determine accurate information for the temperature-dependent variables of the electrical circuit. This paper demonstrates a method of electrical and thermal cosimulation of GaAs interconnects. To illustrate, the method is implemented on a meander line deposited on a GaAs epitaxial substrate. Each horizontal and vertical section of the meander is viewed as an individual heat source cell. An iterative procedure solves for the temperature of each cell and predicts the dc resistance of the line. Using a first-order thermal circuit, simulation shows good agreement with experimental data.
Keywords
circuit simulation; gallium arsenide; integrated circuit interconnections; integrated circuit packaging; GaAs epitaxial substrate; GaAs interconnects; electrical/thermal cosimulation; first-order thermal circuit; heat source cell; iterative procedure; meander line; software simulation packages; temperature-dependent variables; GaAs; heating; interconnections; microstrip; thermal;
fLanguage
English
Journal_Title
Advanced Packaging, IEEE Transactions on
Publisher
ieee
ISSN
1521-3323
Type
jour
DOI
10.1109/TADVP.2007.901651
Filename
4358041
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