• DocumentCode
    939943
  • Title

    Electrical and Thermal Cosimulation of GaAs Interconnects

  • Author

    Wartenberg, Scott A. ; Zhao, Gang ; Liu, Qing Hou

  • Author_Institution
    Booz Allen Hamilton Inc., Arlington
  • Volume
    30
  • Issue
    4
  • fYear
    2007
  • Firstpage
    758
  • Lastpage
    762
  • Abstract
    It is well known that the poor thermal conductivity of GaAs adversely affects the electrical performance of GaAs circuits. Although they interact, the electrical and thermal circuits are simulated using separate software simulation packages. If the circuits are cosimulated on the same package, then the electrical and thermal circuits can interactively determine accurate information for the temperature-dependent variables of the electrical circuit. This paper demonstrates a method of electrical and thermal cosimulation of GaAs interconnects. To illustrate, the method is implemented on a meander line deposited on a GaAs epitaxial substrate. Each horizontal and vertical section of the meander is viewed as an individual heat source cell. An iterative procedure solves for the temperature of each cell and predicts the dc resistance of the line. Using a first-order thermal circuit, simulation shows good agreement with experimental data.
  • Keywords
    circuit simulation; gallium arsenide; integrated circuit interconnections; integrated circuit packaging; GaAs epitaxial substrate; GaAs interconnects; electrical/thermal cosimulation; first-order thermal circuit; heat source cell; iterative procedure; meander line; software simulation packages; temperature-dependent variables; GaAs; heating; interconnections; microstrip; thermal;
  • fLanguage
    English
  • Journal_Title
    Advanced Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3323
  • Type

    jour

  • DOI
    10.1109/TADVP.2007.901651
  • Filename
    4358041