Flip-Chip Assembled GaAs pHEMT Ka-Band Oscillator

Author

Huang, Wei-Kuo ; Liu, Yu-An ; Wang, Che-Ming ; Hsin, Yue-Ming ; Liu, Cheng-Yi ; Tsung-Jung Yeh

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli

Volume

17

Issue

1

fYear

2007

Firstpage

67

Lastpage

69

Abstract

In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-mum-gate pHEMT. With a characterized 0.15-mum-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on Al₂O₃ substrate where the passive components and coplanar waveguide connection were designed and fabricated. The measured output signal was at 27.55 GHz with an output power of 1.87 dBm and a phase noise of -109 dBc/Hz at 1-MHz offset, respectively. To our knowledge, this is the first flip-chip assembled pHEMT oscillator in the Ka-band

Keywords

III-V semiconductors; alumina; assembling; coplanar waveguide components; flip-chip devices; gallium arsenide; gold; high electron mobility transistors; integrated circuit packaging; microwave field effect transistors; microwave oscillators; phase noise; tin; 0.15 micron; 27.55 GHz; Au-Sn; Au-Sn pillar bump transition; GaAs; GaAs pHEMT; Ka-band oscillator; coplanar waveguide connection; flip-chip assembly; passive components; phase noise; Assembly; Coplanar waveguides; Gallium arsenide; Noise measurement; Oscillators; PHEMTs; Phase measurement; Power measurement; Waveguide components; Waveguide transitions; Flip-chip; microwave integrated circuit (MIC); oscillator; pHEMT;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.887272

Filename

4052373