Title :
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates
Author :
Xing, Huili ; Dora, Y. ; Chini, A. ; Heikman, S. ; Keller, S. ; Mishra, U.K.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
fDate :
4/1/2004 12:00:00 AM
Abstract :
High-voltage Al0.22Ga0.78N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; high electron mobility transistors; power HEMT; semiconductor device breakdown; Al0.22Ga0.78N-GaN; AlGaN-GaN; HEMT; device breakdown voltage; dielectric passivation layers; high-electron mobility transistors; multiple field plates; planar transistor fabrication; power switch; Dielectrics and electrical insulation; Electrodes; FETs; Fabrication; Gate leakage; HEMTs; MODFETs; Passivation; Power electronics; Radio frequency;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.824845
