Title :
V-groove power junction field-effect transistor for v.h.f. applications
Author :
Mok, T.D. ; Salama, C.A.T.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A new high-power, high-frequency junction field-effect transistor with a nonplanar V-shaped channel fabricated by preferential etching of ¿100¿ silicon is described. The structure of this transistor is very simple, requires only three photolithographic masking steps and results in a very high packing density. A device having an effective channel length of 2 ¿m was fabricated. This transistor exhibits a low-frequency transconductance of 9.6 mS/mm, a cutoff frequency of 0.9 GHz and an output power density of 25 W/mm2 of chip area.
Keywords :
junction gate field effect transistors; power transistors; JFET; V-groove; VHF applications; nonplanar V-shaped channel; power transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760443
