Stable polycrystalline silicon TFT with MICC

Author

Jung Chul Kim ; Jong Hyun Choi ; Seung Soo Kim ; Jin Jang

Author_Institution

Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea

Volume

25

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

182

Lastpage

184

Abstract

We studied the bias-induced changes in the performance of the poly-Si thin-film transistor (TFT) by metal-induced crystallization of amorphous silicon through a cap layer (MICC) poly-Si. The p-channel poly-Si TFT exhibited a field-effect mobility of 101 cm²/V/spl middot/s and a minimum leakage current of <1.0×10/sup -12/ A/μm at V/sub ds/=-10 V. The MICC poly-Si TFT performance changes little by either gate or hot-carrier bias stress. The better stability appears to be due to the smooth surface of MICC poly-Si, which is /spl sim/2 nm that is much smaller than that (13 nm) of a laser-annealed poly-Si.

Keywords

amorphous semiconductors; crystallisation; silicon compounds; thin film transistors; MICC; amorphous silicon; bias-induced changes; field-effect mobility; gate bias stress; hot-carrier bias stress; laser-annealed polysilicon; leakage current; metal-induced crystallization; p-channel; polycrystalline silicon TFT; polysilicon thin-film transistor; stability; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Amorphous silicon; Crystallization; Glass; Laser stability; Radio frequency; Silicon compounds; Stress; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.824844

Filename

1278549