A 4.5 to 9.2-GHz Wideband Semidynamic Frequency Divide-by-1.5 in GaInP/GaAs HBT

Author

Shin, Hyunchol ; Won, Bokyeon

Author_Institution

Kwangwoon Univ., Seoul

Volume

17

Issue

1

fYear

2007

Firstpage

73

Lastpage

75

Abstract

A semidynamic frequency divide-by-1.5 circuit comprises an image-rejection mixer and a static divide-by-2 in its feedback path. Wideband suppression of unwanted tones is achieved by employing a tunable image-rejection mixer and a tunable single-stage polyphase filter. Implemented in GaInP/GaAs heterojunction bipolar transistor technology, the divide-by-1.5 operates over the input frequency range of 4.5 to 9.2GHz with better than -20-dBc suppressions of 1/3timesf_in and f_in components, while dissipating 29 mA from a 4.1-V supply

Keywords

III-V semiconductors; MMIC; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave mixers; 29 mA; 4.1 V; 4.5 to 9.2 GHz; GaInP-GaAs; dynamic frequency divider; heterojunction bipolar transistors; image-rejection mixer; monolithic microwave integrated circuits; polyphase filter; Energy consumption; Frequency conversion; Frequency synthesizers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave filters; Radiofrequency integrated circuits; Tunable circuits and devices; Wideband; Dynamic frequency divider; GaInP/GaAs heterojunction bipolar transistors (HBTs); monolithic microwave integrated circuits (MMICs);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.887280

Filename

4052383