A logic nanotechnology featuring strained-silicon

Author

Thompson, Scott E. ; Armstrong, Mark ; Auth, Chis ; Cea, Steve ; Chau, Robert ; Glass, Glenn ; Hoffman, Thomas ; Klaus, Jason ; Ma, Zhiyong ; Mcintyre, Brian ; Murthy, Anand ; Obradovic, Borna ; Shifren, Lucian ; Sivakumar, Sam ; Tyagi, Sunit ; Ghani, Tah

Author_Institution

Intel Corp., Hillsboro, OR, USA

Volume

25

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

191

Lastpage

193

Abstract

Strained-silicon (Si) is incorporated into a leading edge 90-nm logic technology . Strained-Si increases saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10 and 25%, respectively. The process flow consists of selective epitaxial Si_1-xGe_x in the source/drain regions to create longitudinal uniaxial compressive strain in the p-type MOSFET. A tensile Si nitride-capping layer is used to introduce tensile uniaxial strain into the n-type MOSFET and enhance electron mobility. Unlike past strained-Si work: 1) the amount of strain for the n-type and p-type MOSFET can be controlled independently on the same wafer and 2) the hole mobility enhancement in this letter is present at large vertical electric fields, thus, making this flow useful for nanoscale transistors in advanced logic technologies.

Keywords

CMOS logic circuits; Ge-Si alloys; MOSFET; electron mobility; hole mobility; nanoelectronics; semiconductor epitaxial layers; silicon; 90 nm; CMOS logic; MOSFET drive currents; Si-SiGe; advanced logic technologies; electron mobility; hole mobility; logic nanotechnology; longitudinal uniaxial compressive strain; n-type MOSFET; nanoscale transistors; p-type MOSEFT; saturated n-type metal-oxide-semiconductor field-effect transistors; saturated p-type metal-oxide-semiconductor field-effect transistors; selective epitaxial Si_1-xGe_x; source-drain regions; strained-silicon; tensile silicon nitride-capping layer; tensile uniaxial strain; vertical electric fields; Capacitive sensors; Electron mobility; FETs; Logic; MOSFETs; Nanotechnology; Silicon; Strain control; Transistors; Uniaxial strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.825195

Filename

1278552