Title :
Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70 °C
Author :
Mircea, A. ; Caliman, A. ; Iakovlev, V. ; Mereuta, A. ; Suruceanu, G. ; Berseth, C.-A. ; Royo, P. ; Syrbu, A. ; Kapon, E.
Author_Institution :
BeamExpress S.A., Lausanne
Abstract :
Room-temperature cavity mode red-shift of about 45nm from the photoluminescence peak is found to be optimal for tradeoff between high modulation bandwidth and good high-temperature performance for InAlGaAs(InP)-AlGaAs fused vertical-cavity surface-emitting lasers (VCSELs) employing tunnel junction carrier injection. Single-mode output power up to 5.4 and 3.1 mW, at 25 degC and 75 degC, respectively, and open eye diagrams exhibiting fall time values close to 40 ps at 10-Gb/s modulation up to at least 70 degC have been obtained for such VCSELs emitting at 1320-nm wavelength
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical communication equipment; optical modulation; photoluminescence; red shift; surface emitting lasers; 10 Gbit/s; 1320 nm; 25 degC; 3 mW; 3.1 mW; 40 ps; 5.4 mW; 70 degC; 75 degC; InAlGaAsInP-AlGaAs; VCSEL; cavity mode; gain peak; photoluminescence; red shift; tunnel junction carrier injection; vertical-cavity surface-emitting lasers; Apertures; Bandwidth; Indium phosphide; Laser modes; Optical surface waves; Power generation; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers; Wafer bonding; Surface-emitting lasers; wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.890081
