• DocumentCode
    940243
  • Title

    A new method for the channel-length extraction in MOSFETs with sub-2-nm gate oxide

  • Author

    Marin, M. ; Deen, M.J. ; de Murcia, M. ; Llinares, P. ; Vildeuil, J.-C.

  • Author_Institution
    Centre d´´Electronique et de Micro-Optoelectronique de Montpellier, UMR CNRS, Montpellier, France
  • Volume
    25
  • Issue
    4
  • fYear
    2004
  • fDate
    4/1/2004 12:00:00 AM
  • Firstpage
    202
  • Lastpage
    204
  • Abstract
    A simple method to extract the effective channel length in deep-submicrometer devices with sub-2-nm gate oxide thickness is presented. The method uses the measured gate current from accumulation to strong inversion. It is easy to implement, fast, and accurate.
  • Keywords
    MOSFET; inversion layers; tunnelling; MOSFET; channel-length extraction; deep-submicrometer devices; gate current measurement; gate oxide; gate tunneling current; strong inversion; Capacitance; Circuit simulation; Current measurement; Data engineering; Design engineering; Electrical resistance measurement; MOSFET circuits; Process design; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2004.825157
  • Filename
    1278556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=940243