Title :
A new method for the channel-length extraction in MOSFETs with sub-2-nm gate oxide
Author :
Marin, M. ; Deen, M.J. ; de Murcia, M. ; Llinares, P. ; Vildeuil, J.-C.
Author_Institution :
Centre d´´Electronique et de Micro-Optoelectronique de Montpellier, UMR CNRS, Montpellier, France
fDate :
4/1/2004 12:00:00 AM
Abstract :
A simple method to extract the effective channel length in deep-submicrometer devices with sub-2-nm gate oxide thickness is presented. The method uses the measured gate current from accumulation to strong inversion. It is easy to implement, fast, and accurate.
Keywords :
MOSFET; inversion layers; tunnelling; MOSFET; channel-length extraction; deep-submicrometer devices; gate current measurement; gate oxide; gate tunneling current; strong inversion; Capacitance; Circuit simulation; Current measurement; Data engineering; Design engineering; Electrical resistance measurement; MOSFET circuits; Process design; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.825157
