DocumentCode :
940252
Title :
Erratum: Dislocation-limited minority-carrier lifetime in n-type GaP
Volume :
12
Issue :
22
fYear :
1976
Firstpage :
604
Keywords :
III-V semiconductors; carrier lifetime; dislocations; gallium compounds; minority carriers; dislocation density; epitaxial GaP layers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760460
Filename :
4240201
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=940252
