650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

Author

Sumpf, Bernd ; Zorn, Martin ; Staske, Ralf ; Fricke, Jörg ; Ginolas, Arnim ; Häusler, Karl ; Pittroff, Wolfgang ; Ressel, Peter ; Erbert, Götz ; Weyers, Markus ; Tränkle, Günther

Author_Institution

Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin

Volume

19

Issue

2

fYear

2007

Firstpage

118

Lastpage

120

Abstract

Reliable operation of 650-nm broad area laser diodes with InGaP quantum-wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. Mounted on chemical vapor deposition (CVD)-diamond heat spreader and standard C-mounts, the 100-mum stripe width lasers showed reliable operation over 5000 h at 15 degC and 600 mW

Keywords

aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; laser reliability; optical fabrication; quantum well lasers; 100 mum; 15 degC; 5000 h; 600 mW; 650 nm; AlGaInP; AlGaInP waveguide layers; C-mounts; InGaP; InGaP quantum-wells; broad area lasers; chemical vapor deposition; diamond heat spreader; laser reliability; Chemical lasers; Chemical vapor deposition; Diode lasers; Optical device fabrication; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Waveguide lasers; Continuous-wave (CW) lasers; laser reliability; red lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.890085

Filename

4052393