Title :
Performance of self-oscillating GaAs m.e.s.f.e.t. mixers at X-band
Author_Institution :
Mullard Research Laboratories, Redhill, UK
Abstract :
A new mode of m.e.s.f.e.t. operation, the self-oscillating mixer is reported. Conversion gains of up to 2 dB at 10 GHz and noise figures as good as 15 dB have been demonstrated by using a simple circuit.
Keywords :
Schottky gate field effect transistors; circuit oscillations; mixers (circuits); solid-state microwave circuits; 15 dB noise figure; 2 dB conversion gains at 10 GHz; GaAs MESFET mixers; X-band; self oscillating mixers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760462
