DocumentCode
940297
Title
Novel magnetic-field sensor using carrier-domain rotation: proposed device design
Author
Gilbert, Barrie
Author_Institution
Analog Devices Inc., Parkstone, UK
Volume
12
Issue
23
fYear
1976
Firstpage
608
Lastpage
610
Abstract
A bipolar semiconductor device is described in which a mobile domain of current rotates around a circular path at a rate proportional to a magnetic field, when this is perpendicular to the planar structure, or follows the magnetic vector when this is in the same plane. Potentially high sensitivities are possible, since the response is inherently integrating; practical limitations to this are discussed.
Keywords
bipolar transistors; magnetic field measurement; semiconductor devices; transducers; bipolar semiconductor device; carrier domain rotation around circular path; digital output; high sensitivities; mobile domain of current; planar structure; practical limitations; proposed device design; semiconductor magnetic field sensor; transducers rate proportional to magnetic field;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760465
Filename
4240213
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