DocumentCode
940305
Title
Novel magnetic-field sensor using carrier-domain rotation: operation and practical performance
Author
Manley, M.H. ; Bloodworth, G.G. ; Bahnas, Y.Z.
Author_Institution
University of Southampton, Department of Electronics, Southampton, UK
Volume
12
Issue
23
fYear
1976
Firstpage
610
Lastpage
611
Abstract
A magnetic field applied to a circular p-n-p-n structure causes rotation of a carrier domain, the localised region where bipolar-transistor action occurs. A theoretical explanation is given of device operation, including the dependence of rotation frequency on flux density. Experimental results are given for a prototype device.
Keywords
bipolar transistors; magnetic field measurement; semiconductor devices; transducers; carrier domain rotation around circular path; circular p-n-p-n structure; dependence of rotation frequency on flux density; experimental results; operation; planar structure; practical performance; prototype device; pulsed output; semiconductor magnetic field sensor; transducers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760466
Filename
4240215
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