Title :
Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
A simple model which describes well the nonequilibrium electron transport in GaAs using the fit to the equilibrium Monte Carlo data is suggested. In the frame of this model, the cutoff-frequency/gate-length curves are calculated for uniform and nonuniform channel field distribution in GaAs f.e.t.s. The results show that the nonhomogeneity of the electric field in the channel can considerably decrease (by 30%) the maximal frequency of GaAs f.e.t.s.
Keywords :
field effect transistors; semiconductor device models; solid-state microwave devices; GaAs FETs; cutoff frequency; cutoff frequency/gate length curves; equilibrium Monte Carlo data; frequency limits; influence of nonuniform field distribution; nonequilibrium electron transport in GaAs; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760470
