DocumentCode
940416
Title
RF CMOS comes of age
Author
Abidi, Asad A.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
39
Issue
4
fYear
2004
fDate
4/1/2004 12:00:00 AM
Firstpage
549
Lastpage
561
Abstract
All-CMOS radio transceivers and systems-on-a-chip are rapidly making inroads into a wireless market that for years was dominated by bipolar and BiCMOS solutions. It is not a matter of replacing bipolar transistors in known circuit topologies with FETs; the wave of RF CMOS brings with it new architectures and unprecedented levels of integration. What are its origins? What is the commercial impact? How will RF CMOS evolve in the future? This paper offers a retrospective and a perspective.
Keywords
integrated circuits; nonradiative dielectric waveguides; SICs; SINRD circuit; air holes; dielectric substrate; dispersion analysis; dispersion design; nonradiative dielectric waveguide circuits; planar circuit; substrate integrated nonradiative dielectric waveguide; Assembly; Circuits; Educational institutions; Filters; Industrial training; Microelectronics; Radio frequency; Receivers; Technological innovation; Telephone sets;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2004.825247
Filename
1278572
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