DocumentCode :
940416
Title :
RF CMOS comes of age
Author :
Abidi, Asad A.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume :
39
Issue :
4
fYear :
2004
fDate :
4/1/2004 12:00:00 AM
Firstpage :
549
Lastpage :
561
Abstract :
All-CMOS radio transceivers and systems-on-a-chip are rapidly making inroads into a wireless market that for years was dominated by bipolar and BiCMOS solutions. It is not a matter of replacing bipolar transistors in known circuit topologies with FETs; the wave of RF CMOS brings with it new architectures and unprecedented levels of integration. What are its origins? What is the commercial impact? How will RF CMOS evolve in the future? This paper offers a retrospective and a perspective.
Keywords :
integrated circuits; nonradiative dielectric waveguides; SICs; SINRD circuit; air holes; dielectric substrate; dispersion analysis; dispersion design; nonradiative dielectric waveguide circuits; planar circuit; substrate integrated nonradiative dielectric waveguide; Assembly; Circuits; Educational institutions; Filters; Industrial training; Microelectronics; Radio frequency; Receivers; Technological innovation; Telephone sets;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2004.825247
Filename :
1278572
Link To Document :
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