DocumentCode
940473
Title
Fabrication of highly reflecting epitaxy-ready Si-SiO2 Bragg reflectors
Author
Akiyama, S. ; Grawert, F.J. ; Liu, J. ; Wada, K. ; Celler, G.K. ; Kimerling, L.C. ; Kaertner, F.X.
Author_Institution
Dept. of Mater. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume
17
Issue
7
fYear
2005
fDate
7/1/2005 12:00:00 AM
Firstpage
1456
Lastpage
1458
Abstract
A complementary metal-oxide-semiconductor-compatible process for fabrication of highly reflecting Si-SiO2 Bragg mirrors with a crystalline top layer was developed. It comprises only one step of wafer-bonding and allows for subsequent epitaxial growth on the mirror. A six-pair reflector centered at 1400 nm with a 99% bandwidth of 700 nm and a surface roughness of 0.136 nm is demonstrated.
Keywords
MIS devices; epitaxial growth; light reflection; mirrors; optical fabrication; silicon; silicon compounds; surface roughness; wafer bonding; 1400 nm; 700 nm; Bragg mirrors; Si-SiO2 Bragg reflectors; Si-SiO2; crystalline top layer; epitaxial growth; epitaxy-ready Bragg reflectors; metal-oxide-semiconductor-compatible process; optical fabrication; reflecting Bragg reflectors; six-pair reflector; surface roughness; wafer-bonding; Bandwidth; Crystallization; Epitaxial growth; Fabrication; High speed optical techniques; Materials science and technology; Mirrors; Reflectivity; Rough surfaces; Silicon; High index contrast (HIC) reflector; optical substrate; photonic bandgap material; silicon Bragg reflector;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2005.850005
Filename
1453642
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