• DocumentCode
    940504
  • Title

    A 50-mW/ch 2.5-Gb/s/ch data recovery circuit for the SFI-5 interface with digital eye-tracking

  • Author

    Miki, Yoshio ; Saito, Tatsuya ; Yamashita, Hiroki ; Yuki, Fumio ; Baba, Takashige ; Koyama, Akio ; Sonehara, Masahito

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    39
  • Issue
    4
  • fYear
    2004
  • fDate
    4/1/2004 12:00:00 AM
  • Firstpage
    613
  • Lastpage
    621
  • Abstract
    This paper describes a 2.5-Gb/s/ch digital data recovery (DR) circuit for the SFI-5 interface. Although minimizing the circuit area has become critical in multibit interfaces such as the SFI-5, few studies have proposed a practical method of reducing the area of data recovery circuits. We introduce a digital-PLL-type DR circuit design with eye-tracking, which we developed to minimize the circuit area and power consumption without degrading tolerance against jitter. This novel method of data recovery enabled us to simplify the circuit design against process, voltage, and temperature variations. Design considerations on how to eliminate high-frequency jitter and how to track long-term wander are described. The design for 2.5-GHz clock distribution is also discussed. The area of the DR circuit, fabricated with 0.18-μm SiGe BiCMOS technology, is 0.02 mm2/ch, and its power consumption is 50 mW/ch at 1.8 V. The measured tolerance against jitter at 2.5 Gb/s is 0.7 UI peak-to-peak, which satisfies the jitter specifications for the SFI-5.
  • Keywords
    BiCMOS digital integrated circuits; circuit optimisation; digital phase locked loops; timing jitter; 0.18 micron; 1.8 V; 2.5 GHz; 2.5 Gbit/s; 50 mW; SFI-5 interface; SiGe; circuit area minimization; digital data recovery circuit; digital eye-tracking; digital-PLL-type DR circuit design; high-frequency jitter; long-term wander tracking; multibit interfaces; power consumption minimization; BiCMOS integrated circuits; Circuit synthesis; Clocks; Degradation; Energy consumption; Germanium silicon alloys; Jitter; Silicon germanium; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2004.824704
  • Filename
    1278579