• DocumentCode
    940592
  • Title

    Processing, characterization, and potential applications of YBa/sub 2/Cu/sub 3/O/sub 7//Au and YBa/sub 2/Cu/sub 3/O/sub 7//Au/Si superconducting thin films fabricated by rapid isothermal processing assisted metalorganic chemical vapor deposition

  • Author

    Singh, R. ; Ng, J.T.C. ; Singh, R.K. ; Qian, F. ; Hsu, N.J. ; Krueger, D.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
  • Volume
    3
  • Issue
    1
  • fYear
    1993
  • fDate
    3/1/1993 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Rapid-isothermal processing (RIP)-assisted metalorganic chemical vapor deposition (MOCVD) has been used for the deposition of high-quality films of YBa/sub 2/Cu/sub 3/O/sub 7/ (YBCO) on insulating substrates at temperatures as low as 610 degrees C. The results of processing and characterization of YBCO films deposited on bulk gold foils and Au/Si substrates by RIP-assisted MOCVD are reported. By the use of YBCO/Au foils, improvement in the performance of Au/YBCO/n-Si Schottky diodes operating at 50 K is achieved.<>
  • Keywords
    Schottky-barrier diodes; barium compounds; chemical vapour deposition; gold; high-temperature superconductors; rapid thermal processing; silicon; superconducting junction devices; superconducting thin films; yttrium compounds; 50 K; Au; MOCVD; Schottky diodes; Si; YBa/sub 2/Cu/sub 3/O/sub 7/-Au; YBa/sub 2/Cu/sub 3/O/sub 7/-Au-Si; characterization; high temperature superconductors; insulating substrates; performance; potential applications; processing; rapid isothermal processing assisted metalorganic chemical vapor deposition; superconducting thin films; Chemical vapor deposition; Dielectric substrates; Gold; High temperature superconductors; Isothermal processes; MOCVD; Plasma temperature; Superconducting films; Superconducting thin films; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.233414
  • Filename
    233414