• DocumentCode
    940640
  • Title

    Novel GaAs metallised diode configurations to reduce skin-effect contributions at high frequencies

  • Author

    Calviello, J.A. ; Wallace, J.L.

  • Author_Institution
    Cutler-Hammer, Inc., Central Research Group, AIL Division, Deer Park, USA
  • Volume
    12
  • Issue
    24
  • fYear
    1976
  • Firstpage
    648
  • Lastpage
    650
  • Abstract
    A highly reliable metallised GaAs Ta-Schottky-barrier diode with native-oxide passivation has been developed. The zero bias cutoff frequency of these diodes is greater than 1000 GHz when measured accurately near 60 GHz, with a zero-bias junction capacitance near 0·1 pF. This zero-bias cutoff frequency is approximately twice the value for a comparable nonmetallised device. The letter describes the r.f. properties and the structure of the device.
  • Keywords
    Schottky-barrier diodes; skin effect; solid-state microwave devices; GaAs metallised diode; RF properties; Schottky barrier diodes; junction capacitance; skin effect; zero bias cutoff frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760498
  • Filename
    4240274
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=940640