DocumentCode
940660
Title
Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes
Author
Beck, Ariane L. ; Karve, G. ; Wang, S. ; Ming, J. ; Guo, X. ; Campbell, J.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Volume
17
Issue
7
fYear
2005
fDate
7/1/2005 12:00:00 AM
Firstpage
1507
Lastpage
1509
Abstract
We report single photon counting in p-n junction 4H-SiC avalanche photodetectors. At 325 nm, the unity-gain external quantum efficiency was 10% and the single photon detection efficiency was 2.9%. This result represents ∼30% of the maximum attainable detection efficiency.
Keywords
avalanche photodiodes; p-i-n photodiodes; photodetectors; photon counting; silicon compounds; wide band gap semiconductors; 10 percent; 2.9 percent; 325 nm; Geiger mode operation; SiC; p-n junction photodetectors; single photon counting; ultraviolet 4H-SiC avalanche photodiodes; unity-gain external quantum efficiency; Annealing; Avalanche photodiodes; Biological materials; Contacts; Dark current; Photodetectors; Probes; Semiconductor device noise; Silicon carbide; Voltage; Avalanche photodiode; Geiger mode; photodetector; silicon carbide;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2005.848399
Filename
1453659
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