Title :
Comparison of GaInNAs laser diodes based on two to five quantum wells
Author :
Gollub, Dirk ; Moses, Susanne ; Forchel, Alfred
Author_Institution :
Nanosystems & Technol., Nanoplus GmbH, Gerbrunn, Germany
fDate :
4/1/2004 12:00:00 AM
Abstract :
We have investigated GaInNAs-GaAsN multiquantum-well (MQW) lasers with two-QW (DQW), three-QW (TQW), and five-QW (5QW) active regions and emission in the 1.3-μm range. A solid-source molecular beam epitaxy system has been used to grow the structures. Operation of a GaInNAs 5QW laser is reported. Low threshold currents of 22 (DQW) to 52 mA (5QWs) and external efficiencies of 0.25 W/A (DQWs) to 0.16 W/A (5QWs) per facet are realized under CW operation. T0-values of 121 K are obtained.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser variables measurement; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1.3 mum; 121 K; 22 to 52 mA; CW operation; GaInNAs laser diodes; GaInNAs-GaAsN; GaInNAs-GaAsN multiquantum well lasers; active regions; emission; epitaxial growth; quantum wells; solid-source molecular beam epitaxy system; threshold currents; Diode lasers; Distributed feedback devices; Laser feedback; Optical fiber communication; Optical materials; Quantum well devices; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.825112
